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Transistor
2SA1531, 2SA1531A
Silicon PNP epitaxial planar type
Unit: mm
(0.425)
For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A s Features
* Low noise voltage NV * High forward current transfer ratio hFE * S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
0.3+0.1 -0.0 3
0.15+0.10 -0.05
1.250.10
2.10.1 5
1
2
(0.65) (0.65) 1.30.1 2.00.2 10
s Absolute Maximum Ratings Ta = 25C
Parameter Collector to base voltage Collector to emitter voltage 2SA1531 2SA1531A 2SA1531 2SA1531A VEBO ICP IC PC Tj Tstg VCEO Symbol VCBO Rating -35 -55 -35 -55 -5 -100 -50 150 150 -55 to +150 V mA mA mW C C V Unit V
0.90.1
0.9+0.2 -0.1
1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package
Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Marking symbol F (2SA1531) H (2SA1531A)
s Electrical Characteristics Ta = 25C
Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio
*1 *2
Conditions VCB = -10 V, IE = 0 VCE = -10 V, IB = 0 IC = -10 A, IE = 0 IC = -2 mA, IB = 0 IE = -10 A, IC = 0 VCE = -5 V, IC = -2 mA IC = -100 mA, IB = -10 mA VCE = -1 V, IC = -100 mA VCB = -10 V, IE = 2 mA, f = 200 MHz VCE = -10 V, IC = -1 mA, GV = 80 dB Rg = 100 k, Function = FLAT
Min
Typ
0 to 0.1
Max -100 -1
Unit nA A V
2SA1531 2SA1531A 2SA1531 2SA1531A
VCBO VCEO VEBO hFE VCE(sat) VBE fT NV
-35 -55 -35 -55 -5 180 - 0.7 80 150 700 - 0.6 -1.0
V
V
Collector to emitter saturation voltage *1 Base to emitter voltage Transition frequency Noise voltage Note) *1: Pulse measurement *2: hFE Rank classification Rank hFE Marking symbol
Publication date: March 2002
V V MHz mV
R 180 to 360
S 260 to 520 FS HS
SJC00020BED
T 360 to 700 FT HT
2SA1531 2SA1531A
FR HR
0.20.1
1
2SA1531, 2SA1531A
PC Ta
240
-160 -140
IC VCE
Ta = 25C IB = -350 A
IC IB
-160 -140
-300 A -250 A -200 A -150 A -100 A
Collector power dissipation PC (mW)
VCE = -5 V Ta = 25C
200
Collector current IC (mA)
160
-100 -80 -60 -40 -20 0 -2 -4 -6 -8
Collector current IC (mA)
-120
-120 -100 -80 -60 -40 -20
120
80
40
-50 A
0
0
40
80
120
160
0
-10
-12
0
0
- 0.1
- 0.2
- 0.3
- 0.4
- 0.5
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
IB VBE
-800 -700 -600 -500 -400 -300 -200 -100 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 VCE = -5 V Ta = 25C -120
IC VBE
Collector to emitter saturation voltage VCE(sat) (V)
VCE = -5 V 25C Ta = 75C -25C -100 -30 -10 -3 -1
VCE(sat) IC
IC / IB = 10
-100
Collector current IC (mA)
Base current IB (A)
-80
-60
-40
- 0.3 - 0.1 - 0.03 - 0.01 - 0.1 - 0.3 -1 -3 25C
Ta = 75C
-20
-25C
0
0
0
- 0.4
- 0.8
-1.2
-1.6
-2.0
-10
-30
-100
Base to emitter voltage VBE (V)
Base to emitter voltage VBE (V)
Collector current IC (mA)
hFE IC
600 VCE = -5 V 500
fT IE
VCB = -5 V Ta = 25C 20
Cob VCB
Collector output capacitance Cob (pF)
18 16 14 12 10 8 6 4 2 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 IE = 0 f = 1 MHz Ta = 25C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
-10 -30 -100
500 Ta = 75C 400 25C -25C
400
300
300
200
200
100
100
0 - 0.1 - 0.3
-1
-3
0 0.1
0.3
1
3
10
30
100
Collector current IC (mA)
Emitter current IE (mA)
Collector to base voltage VCB (V)
2
SJC00020BED
2SA1531, 2SA1531A
NV VCE
160 140 IC = -1 mA GV = 80 dB Function = FLAT Rg = 100 k 100 80 60 40 20 0 -1 0 -1 22 k 300
NV VCE
160 IC = -1 mA GV = 80 dB Function = FLAT Rg = 100 k 180 140
NV IC
VCE = -10 V GV = 80 dB Function = FLAT
240
Noise voltage NV (mV)
Noise voltage NV (mV)
Noise voltage NV (mV)
120
120 100 80 60 22 k 40 4.7 k 20 0 - 0.01 Rg = 100 k
120 22 k 60 4.7 k
4.7 k
-2 -3 -5
-10
-20 -30 -50 -100
-2 -3 -5
-10
-20 -30 -50 -100
- 0.03
- 0.1
- 0.3
-1
Collector to emitter voltage VCE (V)
Collector to emitter voltage VCE (V)
Collector current IC (mA)
NV IC
300
160
NV Rg
300 VCE = -10 V GV = 80 dB Function = FLAT 140
NV Rg
VCE = -10 V GV = 80 dB Function = RIAA
VCE = -10 V GV = 80 dB Function = RIAA
240
240
Noise voltage NV (mV)
Noise voltage NV (mV)
180
100 80 60 IC = -1 mA 40 - 0.5 mA 20 0 - 0.1 mA
Noise voltage NV (mV)
120
180
120
Rg = 100 k
120
60
22 k 4.7 k
60
IC = -1 mA - 0.5 mA - 0.1 mA 1 23 5 10 20 30 50 100
0 - 0.01
- 0.03
- 0.1
- 0.3
-1
1
23
5
10
20 30 50
100
0
Collector current IC (mA)
Signal source resistance Rg (k)
Signal source resistance Rg (k)
SJC00020BED
3
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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